Hui, F., Grustan Gutierrez, E. , Long, S., Lui, Q., Ott, A. K., Ferrari, A. C. and Lanzo, M. (2017) 2D resistive switching memories: graphene and related materials for Resistive Random Access Memories. Advanced Electronic Materials, 3(8), (doi: 10.1002/aelm.201770032)
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Abstract
Graphene and related materials, such as graphene oxide, hexagonal boron nitride, transition metal dichalcogenides and black phosphorous, are promising candidates for the fabrication of resistive random access memories (RRAM), a technology which could represent the next generation of non‐volatile computer memory. In article number 1600195, Mario Lanza and co‐workers explore this emerging field; they discuss, classify, and evaluate a number of materials candidates, and summarize the performance of a number of RRAM prototype devices based on these materials.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Grustan Gutierrez, Dr Enric |
| Authors: | Hui, F., Grustan Gutierrez, E., Long, S., Lui, Q., Ott, A. K., Ferrari, A. C., and Lanzo, M. |
| College/School: | College of Science and Engineering > School of Engineering > Autonomous Systems and Connectivity |
| Journal Name: | Advanced Electronic Materials |
| Publisher: | Wiley |
| ISSN: | 2199-160X |
| ISSN (Online): | 2199-160X |
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