2D resistive switching memories: graphene and related materials for Resistive Random Access Memories

Hui, F., Grustan Gutierrez, E. , Long, S., Lui, Q., Ott, A. K., Ferrari, A. C. and Lanzo, M. (2017) 2D resistive switching memories: graphene and related materials for Resistive Random Access Memories. Advanced Electronic Materials, 3(8), (doi:10.1002/aelm.201770032)

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Abstract

Graphene and related materials, such as graphene oxide, hexagonal boron nitride, transition metal dichalcogenides and black phosphorous, are promising candidates for the fabrication of resistive random access memories (RRAM), a technology which could represent the next generation of non‐volatile computer memory. In article number 1600195, Mario Lanza and co‐workers explore this emerging field; they discuss, classify, and evaluate a number of materials candidates, and summarize the performance of a number of RRAM prototype devices based on these materials.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Grustan Gutierrez, Dr Enric
Authors: Hui, F., Grustan Gutierrez, E., Long, S., Lui, Q., Ott, A. K., Ferrari, A. C., and Lanzo, M.
College/School:College of Science and Engineering > School of Engineering > Aerospace Sciences
Journal Name:Advanced Electronic Materials
Publisher:Wiley
ISSN:2199-160X
ISSN (Online):2199-160X

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