Mobility of circular and elliptical si nanowire transistors using a multi-subband 1d formalism

Medina Bailon, C., Sadi, T., Nedjalkov, M., Carrillo Nenez, C., Lee, J., Badami, O., Georgiev, V. , Selberherr, S. and Asenov, A. (2019) Mobility of circular and elliptical si nanowire transistors using a multi-subband 1d formalism. IEEE Electron Device Letters, (doi:10.1109/LED.2019.2934349) (Early Online Publication)

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Abstract

We have studied the impact of the cross-sectional shape on the electron mobility of n-type silicon nanowire transistors (NWTs). We have considered circular and elliptical cross-section NWTs including the most relevant multisubband scattering processes involving phonon, surface roughness, and impurity scattering. For this purpose, we use a flexible simulation framework, coupling 3D Poisson and 2D Schrödinger solvers with the semi-classical Kubo-Greenwood formalism. Moreover, we consider cross-section dependent effective masses calculated from tight binding simulations. Our results show significant mobility improvement in the elliptic NWTs in comparison to the circular one for both 100 and 110 transport directions.

Item Type:Articles
Status:Early Online Publication
Refereed:Yes
Glasgow Author(s) Enlighten ID:Lee, Jaehyun and Badami, Mr Oves and Georgiev, Dr Vihar and Asenov, Professor Asen and Medina Bailon, Miss Cristina
Authors: Medina Bailon, C., Sadi, T., Nedjalkov, M., Carrillo Nenez, C., Lee, J., Badami, O., Georgiev, V., Selberherr, S., and Asenov, A.
College/School:College of Science and Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Electron Device Letters
Publisher:Institute of Electrical and Electronics Engineers
ISSN:0741-3106
ISSN (Online):0741-3106
Published Online:09 August 2019
Copyright Holders:Copyright © 2019 IEEE
First Published:First published in IEEE Electron Device Letters 2019
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
703701SUPERAID7Asen AsenovEuropean Commission (EC)688101ENG - ENGINEERING ELECTRONICS & NANO ENG

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