Anisotropic magnetoresistance state space of permalloy nanowires with domain wall pinning geometry

Corte-León, H., Nabaei, V. , Manzin, A., Fletcher, J., Krzysteczko, P., Schumacher, H. W. and Kazakova, O. (2014) Anisotropic magnetoresistance state space of permalloy nanowires with domain wall pinning geometry. Scientific Reports, 4, 6045. (doi:10.1038/srep06045) (PMID:25116470) (PMCID:PMC4131225)

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Abstract

The domain wall-related change in the anisotropic magnetoresistance in L-shaped permalloy nanowires is measured as a function of the magnitude and orientation of the applied magnetic field. The magnetoresistance curves, compiled into so-called domain wall magnetoresistance state space maps, are used to identify highly reproducible transitions between domain states. Magnetic force microscopy and micromagnetic modelling are correlated with the transport measurements of the devices in order to identify different magnetization states. Analysis allows to determine the optimal working parameters for specific devices, such as the minimal field required to switch magnetization or the most appropriate angle for maximal separation of the pinning/depinning fields. Moreover, the complete state space maps can be used to predict evolution of nanodevices in magnetic field without a need of additional electrical measurements and for repayable initialization of magnetic sensors into a well-specified state.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Nabaei, Dr Vahid
Authors: Corte-León, H., Nabaei, V., Manzin, A., Fletcher, J., Krzysteczko, P., Schumacher, H. W., and Kazakova, O.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Scientific Reports
Publisher:Nature Publishing Group
ISSN:2045-2322
ISSN (Online):2045-2322
Copyright Holders:Copyright © 2014 The Authors
First Published:First published in Scientific Reports 4: 6045
Publisher Policy:Reproduced under a Creative Commons License

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