Benefits of Quantum Well Intermixing in High Power Diode Lasers

Nadja, S. P., Bacchin, G., Qiu, B., Liu, X., Kowalski, O. P., Silver, M., McDougall, S. D., Hamilton, C. J. and Marsh, J. H. (2004) Benefits of Quantum Well Intermixing in High Power Diode Lasers. In: Novel In-Plane Semiconductor Lasers III, San Jose, CA, USA, 26-28 Jan 2004, (doi:10.1117/12.530263)

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Abstract

Quantum well intermixing (QWI) can bring considerable benefits to the reliability and performance of high power laser diodes by intermixing the facet regions of the device to increase the band-gap and hence eliminate absorption, avoiding catastrophic optical damage (COD). The non-absorbing mirror (NAM) regions of the laser cavity can be up to ~20% of the cavity length, giving an additional benefit on cleave tolerances, to fabricate very large element arrays of high power, individually addressable, single mode lasers. As a consequence, large arrays of single mode lasers can bring additional benefits for packaging in terms of hybrization and integration into an optics system. Our QWI techniques have been applied to a range of material systems, including GaAs/AlGaAs, (Al)GaAsP/AlGaAs and InGaAs/GaAs.

Item Type:Conference Proceedings
Additional Information:Proc. of SPIE Vol. 5365, 2004.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Liu, Professor Xuefeng and Marsh, Professor John
Authors: Nadja, S. P., Bacchin, G., Qiu, B., Liu, X., Kowalski, O. P., Silver, M., McDougall, S. D., Hamilton, C. J., and Marsh, J. H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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