Novel High-Brightness Laser Dtodes at 830 nm

Yanson, D. A., Qiu, B., Kowalski, O. P., McDougall, S. D. and Marsh, J. H. (2006) Novel High-Brightness Laser Dtodes at 830 nm. In: LEOS 2006 - 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society, Montreal, Que., Canada, 29 Oct - 2 Nov 2006, pp. 585-586. ISBN 0780395565 (doi:10.1109/LEOS.2006.278794)

Full text not currently available from Enlighten.

Abstract

We present novel high-power laser diodes at 830 nm with a device structure and epitaxy design optimized for high-brightness operation. A reduction in both horizontal and vertical far-field angles is demonstrated together with improvement in beam quality.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John
Authors: Yanson, D. A., Qiu, B., Kowalski, O. P., McDougall, S. D., and Marsh, J. H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISSN:1092-8081
ISBN:0780395565

University Staff: Request a correction | Enlighten Editors: Update this record