High-Power, High-Brightness, High-Reliability Laser Diodes Emitting at 800-1000 nm

Yanson, D. A., Marsh, J. H. , Najda, S., McDougall, S. D., Fadli, H., Masterson, G., Qiu, B., Kowalski, O., Bacchin, G. and McKinnon, G. (2007) High-Power, High-Brightness, High-Reliability Laser Diodes Emitting at 800-1000 nm. In: High-Power Diode Laser Technology and Applications V, San Jose, CA, USA, 22-24 January 2007, (doi:10.1117/12.699038)

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Abstract

In this paper we report the development of high power high brightness semiconductor laser chips using a combination of quantum well intermixing (QWI) and novel laser designs including laterally unconfined non-absorbing mirrors (LUNAM). We demonstrate both multi-mode and single-mode lasers with increased power and brightness and reliability performance for the wavelengths of 980 nm, 940 nm, 830 nm and 808 nm.

Item Type:Conference Proceedings
Additional Information:Proc SPIE vol. 6456, 2007
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John
Authors: Yanson, D. A., Marsh, J. H., Najda, S., McDougall, S. D., Fadli, H., Masterson, G., Qiu, B., Kowalski, O., Bacchin, G., and McKinnon, G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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