253 mW/μm Maximum Power Density from 9xx nm epitaxial Laser Structures with d/Γ greater than 1 μm

Petrescu-Prahova, I.B., Modak, P., Goutain, E., Bambrick, D., Silan, D., Riordan, J., Moritz, T. and Marsh, J.H. (2008) 253 mW/μm Maximum Power Density from 9xx nm epitaxial Laser Structures with d/Γ greater than 1 μm. In: 2008 IEEE 21st International Semiconductor Laser Conference, Sorrento, Italy, 14-18 Sep 2008, pp. 135-136. ISBN 9781424417827 (doi:10.1109/ISLC.2008.4636046)

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Abstract

This study has presented the results for scaling the maximum power for two series of 940-962 nm diode lasers by scaling the d/Gamma ratio simultaneously with the device length. Experimental validation of this approach is also presented. A record maximum power of 25.3 W from a 100 mum aperture broad stripe laser operating at 940 nm and record power density of 253 mW/mum are obtained for a cavity length of 5 mm and a d/Gamma ratio of 1.17 mum.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John
Authors: Petrescu-Prahova, I.B., Modak, P., Goutain, E., Bambrick, D., Silan, D., Riordan, J., Moritz, T., and Marsh, J.H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISSN:0899-9406
ISBN:9781424417827

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