An external capacitor-less low-dropout voltage regulator using a transconductance amplifier

Fan, H. et al. (2019) An external capacitor-less low-dropout voltage regulator using a transconductance amplifier. IEEE Transactions on Circuits and Systems II: Express Briefs, 66(10), pp. 1748-1752. (doi:10.1109/TCSII.2019.2921874)

Fan, H. et al. (2019) An external capacitor-less low-dropout voltage regulator using a transconductance amplifier. IEEE Transactions on Circuits and Systems II: Express Briefs, 66(10), pp. 1748-1752. (doi:10.1109/TCSII.2019.2921874)

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Abstract

This paper presents an external capacitor-less NMOS low-dropout (LDO) voltage regulator integrated with a standard CSMC 0.6 μm BiCMOS technology. Over a -55 ∘C to +125 ∘C temperature range, the fabricated LDO provides a stable and considerable amount of 3 A output current over wide ranges of output capacitance COUT (from zero to hundreds of μF ) and effective-series-resistance (ESR) (from tens of milliohms to several ohms). A low dropout voltage of 200 mV has been realised by accurate modelling. Operating with an input voltage ranging from 2.2 V to 5.5 V provides a scalable output voltage from 0.8 V to 3.6 V. When the load current jumps from 100 mA to 3 A within 3 μs, the output voltage overshoot remains as low as 50 mV without output capacitance, COUT. The system bandwidth is about 2 MHz, and hardly changes with load altering to ensure system stability. To improve the load transient response and driving capacity of the NMOS power transistor, a buffer with high input impedance and low output impedance is applied between the transconductance amplifier and the NMOS power transistor. The total area of fabricated LDO voltage regulator chip including pads is 2.1 mm×2.2 mm.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Heidari, Dr Hadi
Authors: Fan, H., Diao, X., Li, Y., Fang, K., Wen, H., Li, D., Zhang, K., Cen, Y., Zhang, D., Feng, Q., and Heidari, H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Transactions on Circuits and Systems II: Express Briefs
Publisher:Institute of Electrical and Electronics Engineers
ISSN:1549-7747
ISSN (Online):1558-3791
Published Online:10 June 2019
Copyright Holders:Copyright © 2019 IEEE
First Published:First published in IEEE Transactions on Circuits and Systems II: Express Briefs 66(10):1748-1752
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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