Flexible AlN Coupled MOSFET Device for Touch Sensing

Gupta, S., Yogeswaran, N., Giacomozzi, F., Lorenzelli, L. and Dahiya, R. (2018) Flexible AlN Coupled MOSFET Device for Touch Sensing. In: 2018 IEEE Sensors, New Delhi, India, 28-31 Oct 2018, ISBN 9781538647073 (doi:10.1109/ICSENS.2018.8589628)

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Abstract

This work presents touch sensing device with flexible piezoelectric Aluminium Nitride (AIN) capacitor tightly coupled with a MOSFET device. Unlike conventional high-temperature deposition, the A1N in this work was sputtered on polyimide at room temperature to obtain a flexible piezoelectric touch sensing element. Further, the proposed device has reliable operation as unlike other similar touch sensing devices, where high voltage needed to polarize the piezoelectric layer poses a major risk for the MOSFET operation, the A1N does not require any poling. The touch sensor has been evaluated in a force range of 0.5-3.5N and normalised change in drain current per unit force or the sensitivity is found to be 2.64 N -1.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Dahiya, Professor Ravinder and Yogeswaran, Mr Nivasan and Gupta, Mr Shoubhik
Authors: Gupta, S., Yogeswaran, N., Giacomozzi, F., Lorenzelli, L., and Dahiya, R.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISSN:2168-9229
ISBN:9781538647073

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