An accurate analytical model for tunnel FET output characteristics

Guan, Y., Li, Z., Carrillo-Nunez, H., Zhang, Y., Georgiev, V. P. , Asenov, A. and Liang, F. (2019) An accurate analytical model for tunnel FET output characteristics. IEEE Electron Device Letters, 40(6), pp. 1001-1004. (doi: 10.1109/LED.2019.2914014)

185463.pdf - Accepted Version



The analytical models for the output characteristics of tunnel FETs (TFETs) based on Maxwell–Boltzmann (MB) statistics have some accuracy issues, especially in linear region of operation, when compared with more sophisticated numerical approaches. In this letter, by exploiting the thermal injection method (TIM), an accurate analytical model for the TFET potential profile is proposed. Although the approach is initially envisaged for heterojunction TFETs (H-TFETs), it could be straightforwardly adopted for homojunction TFETs. After an accurate description of the potential profile is obtained, then, the current is computed by means of a Landauer-like expression. Comparison with the numerical simulations at different bias conditions show that the predicted output characteristics qualitatively improve, leading to a significant enhancement in accuracy at a much less-computational cost.

Item Type:Articles
Additional Information:This work was supported in part by the National Natural Science Foundation of China under Grant 61176038 and Grant 61474093, the Technology Development Program of Shaanxi Province under Grant 2016GY-075.
Glasgow Author(s) Enlighten ID:Carrillo-Nunez, Dr Hamilton and Georgiev, Dr Vihar and Guan, Yunhe and Asenov, Professor Asen
Authors: Guan, Y., Li, Z., Carrillo-Nunez, H., Zhang, Y., Georgiev, V. P., Asenov, A., and Liang, F.
College/School:College of Science and Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Electron Device Letters
Publisher:Institute of Electrical and Electronics Engineers
ISSN (Online):0741-3106
Published Online:01 May 2019
Copyright Holders:Copyright © 2019 IEEE
First Published:First published in IEEE Electron Device Letters 40(6):1001-1004
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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