Comprehensive study of cross-section dependent effective masses for silicon based gate-all-around transistors

Badami, O., Medina-Bailon, C., Berrada, S., Carrillo-Nunez, H., Lee, J., Georgiev, V. and Asenov, A. (2019) Comprehensive study of cross-section dependent effective masses for silicon based gate-all-around transistors. Applied Sciences, 9(9), 1895. (doi:10.3390/app9091895)

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Abstract

The use of bulk effective masses in simulations of the modern-day ultra-scaled transistor is erroneous due to the strong dependence of the band structure on the cross-section dimensions and shape. This has to be accounted for in transport simulations due to the significant impact of the effective masses on quantum confinement effects and mobility. In this article, we present a methodology for the extraction of the electron effective masses, in both confinement and the transport directions, from the simulated electronic band structure of the nanowire channel. This methodology has been implemented in our in-house three-dimensional (3D) simulation engine, NESS (Nano-Electronic Simulation Software). We provide comprehensive data for the effective masses of the silicon-based nanowire transistors (NWTs) with technologically relevant cross-sectional area and transport orientations. We demonstrate the importance of the correct effective masses by showing its impact on mobility and transfer characteristics.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Lee, Jaehyun and Berrada, Dr Salim and Medina Bailon, Miss Cristina and Carrillo-Nunez, Dr Hamilton and Badami, Mr Oves and Georgiev, Dr Vihar
Creator Roles:
Badami, O.Writing – original draft, Methodology
Medina-Bailon, C.Writing – original draft, Methodology
Lee, J.Methodology
Berrada, S.Methodology
Carrillo-Nunez, H.Writing – review and editing
Georgiev, V.Writing – review and editing, Supervision
Asenov, A.Supervision
Authors: Badami, O., Medina-Bailon, C., Berrada, S., Carrillo-Nunez, H., Lee, J., Georgiev, V., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Sciences
Publisher:MDPI
ISSN:2076-3417
ISSN (Online):2076-3417
Copyright Holders:Copyright © 2019 The Authors
First Published:First published in Applied Sciences 9(9):1895
Publisher Policy:Reproduced under a Creative Commons License

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
702351REMINDERAsen AsenovEuropean Commission (EC)687931ENG - ENGINEERING ELECTRONICS & NANO ENG

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