Magnetotransport properties of Fe3O4 thin films for applications in spin electronics

De Teresa, J.M., Fernandez-Pacheco, A. , Morellon, L., Orna, J., Pardo, J.A., Serrate, D., Algarabel, P.A. and Ibarra, M.R. (2007) Magnetotransport properties of Fe3O4 thin films for applications in spin electronics. Microelectronic Engineering, 84(5-8), pp. 1660-1664. (doi: 10.1016/j.mee.2007.01.120)

Abstract

We report the magnetotransport properties of a 40 nm-thick Fe3O4 thin film grown on a MgO (0 0 1) substrate by means of pulsed laser deposition, with potential application in Spin Electronics. X-ray diffraction experiments indicate the epitaxial growth with high crystal quality. The resistivity measurements show the anomaly characteristic of the Verwey transition. The magnetoresistance ratios are small as expected for epitaxial Fe3O4 thin films and caused by spin-polarized transport through antiphase boundaries. The Hall resistivity is found to be proportional to the magnetization, which strongly suggests that the main contribution comes from the anomalous Hall effect. For the first time on epitaxial Fe3O4 thin films, we report the enhancement of the Hall resistivity as the Verwey transition temperature is approached, as had previously been found in bulk single crystals and polycrystalline thick films. Implications of this finding are discussed.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Fernandez-Pacheco, Dr Amalio
• Authors: De Teresa, J.M., Fernandez-Pacheco, A., Morellon, L., Orna, J., Pardo, J.A., Serrate, D., Algarabel, P.A., and Ibarra, M.R.
• College/School: College of Science and Engineering > School of Physics and Astronomy
• Journal Name: Microelectronic Engineering
• Publisher: Elsevier
• ISSN: 0167-9317
• Published Online: 03 February 2007