Magnetic properties and interlayer coupling of epitaxial Co/Cu films on Si

Mansell, R., Petit, D.C.M.C., Fernandez-Pacheco, A. , Lavrijsen, R., Lee, J.H. and Cowburn, R.P. (2014) Magnetic properties and interlayer coupling of epitaxial Co/Cu films on Si. Journal of Applied Physics, 116, 063906. (doi: 10.1063/1.4893306)

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Abstract

Thin films of Co and Co/Cu/Co trilayers with wedged Cu interlayers were grown epitaxially on Cu buffer layers on hydrogen passivated Si(001) wafers. We find that single Co layers have a well-defined four-fold anisotropy but with smaller in-plane anisotropies than observed in Co grown on Cu crystals. Ruderman–Kittel–Kasuya–Yosida (RKKY) interlayer coupling is observed in one Co/Cu/Co sample which is the smoothest of the films as measured by atomic force microscopy. Some of the films also form a dot-like structure on the surface. Intermixing at elevated temperatures between the Cu buffer and Si limits the ability to form flat surfaces to promote RKKY coupling.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Fernandez-Pacheco, Dr Amalio
Authors: Mansell, R., Petit, D.C.M.C., Fernandez-Pacheco, A., Lavrijsen, R., Lee, J.H., and Cowburn, R.P.
College/School:College of Science and Engineering > School of Physics and Astronomy
Journal Name:Journal of Applied Physics
Publisher:American Institute of Physics
ISSN:0021-8979

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