Si/SiGe tunneling static random access memories

Ternent, G. and Paul, D. J. (2013) Si/SiGe tunneling static random access memories. ECS Transactions, 50(9), pp. 987-990. (doi:10.1149/05009.0987ecst)

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One of the limits to the low power operation of MOSFET devices is the minimum subthreshold slope defined by the p-n junctions in the devices. A tunneling static random access memory is demonstrated with a supply voltage of 0.42 V, well below the minimum supply voltage that MOSFET technology is capable of delivering. The memory is produced using two Si/SiGe resonant tunneling diodes with peak voltages of 0.175 V fabricated on top of a silicon substrate.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Ternent, G., and Paul, D. J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Journal Name:ECS Transactions
Publisher:Electrochemical Society
ISSN (Online):1938-6737

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