Low specific ohmic contacts to n-type germanium using a low temperature NiGe process

Gallacher, K. F., Velha, P., Paul, D. J. , Maclaren, I., Myronov, M. and Leadly, D. R. (2013) Low specific ohmic contacts to n-type germanium using a low temperature NiGe process. ECS Transactions, 50(9), pp. 1081-1084. (doi:10.1149/05009.1081ecst)

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Abstract

A new n-Ge Ohmic contact scheme is demonstrated using a three stage deposition of Ni, Ge and Ni. The lowest specific contact resistivity demonstrated was (1.68 +/- 0.4) x 10⁻⁷ Ω-cm∧2, with a low transfer length of (0.95 +/- 0.12) for deposited Ni and Ge annealed at 340 oC for 30 s on n-Ge with a doping density of 3 x 10¹⁹ cm-3.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Gallacher, K. F., Velha, P., Paul, D. J., Maclaren, I., Myronov, M., and Leadly, D. R.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Journal Name:ECS Transactions
Publisher:Electrochemical Society
ISSN:1938-5862
ISSN (Online):1938-6737

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