Si/SiGe electron resonant tunneling diodes with graded spacer wells

Paul, D.J. et al. (2001) Si/SiGe electron resonant tunneling diodes with graded spacer wells. Applied Physics Letters, 78(26), pp. 4184-4186. (doi:10.1063/1.1381042)

Full text not currently available from Enlighten.

Abstract

Resonant tunneling diodes have been fabricated using graded Si1−xGex (x=0.3→0.0) spacer wells and strained Si0.4Ge0.6 barriers on a relaxed Si0.7Ge0.3 n-type substrate which demonstrates negative differential resistance at up to 100 K. This design is aimed at reducing the voltage at which the peak current density is achieved. Peak current densities of 0.08 A/cm2 with peak-to-valley current ratios of 1.67 have been achieved for a low peak voltage of 40 mV at 77 K. This represents an improvement of over an order of magnitude compared to previous work.

Item Type:Articles
Keywords:Silicon, Ge-Si alloys, resonant tunnelling diodes, quantum well devices, semiconductor quantum wells, negative resistance, current density
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Paul, D.J., See, P., Bates, R., Griffin, N., Coonan, B.P., Redmond, G., Crean, G.M., Zozoulenko, I. V., Berggren, K.-F., Hollande, B., and Mantl, S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:semiconductor Devices
Journal Name:Applied Physics Letters
Publisher:AIP Publishing
ISSN:0003-6951
ISSN (Online):1077-3118

University Staff: Request a correction | Enlighten Editors: Update this record