The scaled performance of Si/Si/sub 1-x/Gex resonant tunneling diodes

See, P. and Paul, D.J. (2001) The scaled performance of Si/Si/sub 1-x/Gex resonant tunneling diodes. IEEE Electron Device Letters, 22(12), pp. 582-584. (doi:10.1109/55.974584)

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Small area resonant tunneling diodes (RTDs) with strained Si/sub 0.4/Ge/sub 0.6/ potential barriers and a strained Si quantum well grown on a relaxed Si/sub 0.8/Ge/sub 0.2/ virtual substrate were fabricated and characterized. A room temperature peak current density (J/sub P/) of 282 kA/cm/sup 2/ with a peak to valley current ratio (PVCR) of 2.43 were recorded for a 5/spl times/5 /spl mu/m/sup 2/ sample, the highest values reported to date for Si/Si/sub 1-x/Ge/sub x/ RTDs. Scaling of the device size demonstrated a decrease in J/sub P/ proportional to an increase in the lateral area of the tunnel junctions, whereas the PVCR remained approximately constant. This observation suggests that the dc behavior of such Si/Si/sub 1-x/Ge/sub x/ RTD design is presently limited by thermal effects.

Item Type:Articles
Keywords:Ge-Si alloys, band structure, elemental semiconductors, resonant tunnelling diodes, semiconductor materials, silicon, 5 micron, PVCR, Si-Si/sub 1-x/Ge/sub x/, Si/Si/sub 1-x/Ge/sub x/, dc behavior, device size, lateral area, peak to valley current ratio, resonant tunneling diodes, room temperature peak current density, scaled performance, thermal effects, tunnel junctions, capacitive sensors, current density, electrodes, fets, large scale integration, resonance, resonant tunneling devices, semiconductor diodes, silicon, temperature
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: See, P., and Paul, D.J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:semiconductor Devices
Journal Name:IEEE Electron Device Letters
Publisher:Institute of Electrical and Electronics Engineers
ISSN (Online):0741-3106

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