High performance Si/Si/sub 1-x/Gex resonant tunneling diodes

See, P., Paul, D.J. , Hollander, B., Mantl, S., Zozoulenko, I.V. and Berggren, K.-F. (2001) High performance Si/Si/sub 1-x/Gex resonant tunneling diodes. IEEE Electron Device Letters, 22(4), pp. 182-184. (doi:10.1109/55.915607)

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Abstract

Resonant tunneling diodes (RTDs) with strained i-Si/sub 0.4/Ge/sub 0.6/ potential barriers and a strained i-Si quantum well, all on a relaxed Si/sub 0.8/Ge/sub 0.2/ virtual substrate were successfully grown by ultra high vacuum compatible chemical vapor deposition and fabricated using standard Si processing methods. A large peak to valley current ratio of 2.9 and a peak current density of 4.3 kA/cm/sup 2/ at room temperature were recorded from pulsed and continuous dc current-voltage measurements, the highest reported values to date for Si/Si/sub 1-x/Ge/sub x/ RTDs. These dc figures of merit and material system render such structures suitable and highly compatible with present high speed and low power Si/Si/sub 1-x/Ge/sub x/ heterojunction field effect transistor based integrated circuits.

Item Type:Articles
Keywords:Ge-Si alloys, chemical vapour deposition, current density, field effect integrated circuits, internal stresses, quantum well devices, resonant tunnelling diodes, semiconductor device measurement, silicon, RTDs, Si processing, Si/Si/sub 1-x/Ge/sub x/ HFET based integrated circuits, Si/sub 0.4/Ge/sub 0.6/-Si, Si/sub 0.8/Ge/sub 0.2/, band gap engineered device, continuous dc current-voltage measurements, dc figures of merit, high performance Si/Si/sub 1-x/Ge/sub x/ resonant tunneling diodes, peak current density, peak to valley current ratio, pulsed dc current-voltage measurements, relaxed Si/sub 0.8/Ge/sub 0.2/ virtual substrate, strained i-Si quantum well, strained i-Si/sub 0.4/Ge/sub 0.6/ potential barriers, ultra high vacuum compatible chemical vapor deposition, chemical vapor deposition, current density, current measurement, density measurement, diodes, elementary particle vacuum, heterojunctions, pulse measurements, resonant tunneling devices, temperature
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: See, P., Paul, D.J., Hollander, B., Mantl, S., Zozoulenko, I.V., and Berggren, K.-F.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Journal Name:IEEE Electron Device Letters
Publisher:Institute of Electrical and Electronics Engineers
ISSN:0741-3106
ISSN (Online):0741-3106

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