Paul, D.J. , See, P., Zozoulenko, I.V., Berggren, K.-F., Kabius, B., Hollander, B. and Mantl, S. (2000) Si/SiGe electron resonant tunneling diodes. Applied Physics Letters, 77(11), pp. 1653-1655. (doi: 10.1063/1.1309020)
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Abstract
Resonant tunneling diodes have been fabricated using strained-Si wells and strained Si0.4 Ge0.6 barriers on a relaxed Si0.8 Ge0.2 n-type substrate, which demonstrate negative differential resistance at 298 K. Peak current densities of 5 kA/cm2 with peak-to-valley current ratios of 1.1 have been achieved. Theoretical modeling of the structure demonstrates that the major current peak results from the tunneling of light-mass electrons from the relaxed substrate and not from the heavy-mass electrons in the emitter accumulation layer.
Item Type: | Articles |
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Keywords: | Silicon, Ge-Si alloys, resonant tunnelling diodes, elemental semiconductors, semiconductor quantum wells, current density, negative resistance, semiconductor device models |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Paul, Professor Douglas |
Authors: | Paul, D.J., See, P., Zozoulenko, I.V., Berggren, K.-F., Kabius, B., Hollander, B., and Mantl, S. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Research Group: | Semiconductor Devices |
Journal Name: | Applied Physics Letters |
Publisher: | AIP Publishing |
ISSN: | 0003-6951 |
ISSN (Online): | 1077-3118 |
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