Si/SiGe electron resonant tunneling diodes

Paul, D.J. , See, P., Zozoulenko, I.V., Berggren, K.-F., Kabius, B., Hollander, B. and Mantl, S. (2000) Si/SiGe electron resonant tunneling diodes. Applied Physics Letters, 77(11), pp. 1653-1655. (doi:10.1063/1.1309020)

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Resonant tunneling diodes have been fabricated using strained-Si wells and strained Si0.4 Ge0.6 barriers on a relaxed Si0.8 Ge0.2 n-type substrate, which demonstrate negative differential resistance at 298 K. Peak current densities of 5 kA/cm2 with peak-to-valley current ratios of 1.1 have been achieved. Theoretical modeling of the structure demonstrates that the major current peak results from the tunneling of light-mass electrons from the relaxed substrate and not from the heavy-mass electrons in the emitter accumulation layer.

Item Type:Articles
Keywords:Silicon, Ge-Si alloys, resonant tunnelling diodes, elemental semiconductors, semiconductor quantum wells, current density, negative resistance, semiconductor device models
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Paul, D.J., See, P., Zozoulenko, I.V., Berggren, K.-F., Kabius, B., Hollander, B., and Mantl, S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Journal Name:Applied Physics Letters
Publisher:AIP Publishing
ISSN (Online):1077-3118

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