Intersubband lifetimes in p-Si / Si Ge terahertz quantum cascade heterostructures

Kelsall, R.W. et al. (2005) Intersubband lifetimes in p-Si / Si Ge terahertz quantum cascade heterostructures. Physical Review B, 71, 115326. (doi:10.1103/PhysRevB.71.115326)

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Time-resolved studies of the dynamics of intersubband transitions are reported in three different strain symmetrized p−Si/SiGe multiple-quantum-well and quantum cascade structures in the far-infrared wavelength range (where the photon energy is less than the optical phonon energy), utilizing the FELIX free-electron laser. The calculated rates for optical and acoustic phonon scattering, alloy disorder scattering, and carrier-carrier scattering have been included in a self-consistent energy balance model of the transient far-infrared intersubband absorption, and show good agreement with our degenerate pump-probe spectroscopy measurements in which, after an initial rise time determined by the resolution of our measurement, we determine decay times ranging from ∼2to∼25ps depending on the design of the structure. In all three samples the lifetimes for the transition from the first light hole subband to the first heavy hole subband are found to be approximately constant in the temperature range 4–100K.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Kelsall, R.W., Ikonic, Z., Murzyn, P., Pidgeon, C.R., Phillips, P.J., Carder, D., Harrison, P., Lynch, S.A., Townsend, P., Paul, D.J., Liew, S.L., Norris, D.J., and Cullis, A.G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Journal Name:Physical Review B
Publisher:American Physical Society
ISSN (Online):1550-235X

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