Cotunneling of holes in silicon-based structures

Paul, D. J. , Cleaver, J.R.A., Ahmed, H. and Whall, T.E. (1994) Cotunneling of holes in silicon-based structures. Physical Review B, 49, pp. 16514-16517. (doi:10.1103/PhysRevB.49.16514)

Full text not currently available from Enlighten.

Abstract

Inelastic cotunneling of holes through double-tunnel-junction systems fabricated in δ-doped silicon-germanium layers was studied for bias voltages below the Coulomb blockade threshold. The inelastic, linear, finite-temperature cotunneling term dominates for lower voltages while the zero-temperature, cubic cotunneling term dominates for higher voltages below the Coulomb blockade threshold for temperatures above 4.2 K.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Paul, D. J., Cleaver, J.R.A., Ahmed, H., and Whall, T.E.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Journal Name:Physical Review B
Publisher:American Physical Society
ISSN:1098-0121
ISSN (Online):1550-235X

University Staff: Request a correction | Enlighten Editors: Update this record