Paul, D. J. , Cleaver, J.R.A., Ahmed, H. and Whall, T.E. (1994) Cotunneling of holes in silicon-based structures. Physical Review B, 49, pp. 16514-16517. (doi: 10.1103/PhysRevB.49.16514)
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Abstract
Inelastic cotunneling of holes through double-tunnel-junction systems fabricated in δ-doped silicon-germanium layers was studied for bias voltages below the Coulomb blockade threshold. The inelastic, linear, finite-temperature cotunneling term dominates for lower voltages while the zero-temperature, cubic cotunneling term dominates for higher voltages below the Coulomb blockade threshold for temperatures above 4.2 K.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Paul, Professor Douglas |
| Authors: | Paul, D. J., Cleaver, J.R.A., Ahmed, H., and Whall, T.E. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Research Group: | Semiconductor Devices |
| Journal Name: | Physical Review B |
| Publisher: | American Physical Society |
| ISSN: | 1098-0121 |
| ISSN (Online): | 1550-235X |
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