Coulomb blockade in silicon based structures at temperatures up to 50 K

Paul, D. J. , Cleaver, J. R. A., Ahmed, H. and Whall, T. E. (1993) Coulomb blockade in silicon based structures at temperatures up to 50 K. Applied Physics Letters, 63(5), pp. 631-632. (doi:10.1063/1.109972)

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Abstract

Coulomb blockade has been observed in the current‐voltage characteristics of structures fabricated in silicon germanium δ‐doped material at temperatures up to 50 K. This is consistent with the estimated effective tunnel capacitance of 10 aF which is significantly smaller than the reported capacitances of tunnel junctions made from Al or GaAs/AlGaAs heterostructures.

Item Type:Articles
Keywords:Silicon alloys, germanium alloys, heterojunctions, tunnel diodes, nanostructures, IV characteristic, capacitance, doped materials, temperature dependence
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Paul, D. J., Cleaver, J. R. A., Ahmed, H., and Whall, T. E.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics Letters
Publisher:AIP Publishing
ISSN:0003-6951
ISSN (Online):1077-3118

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