Mid-Infrared Plasmonic Platform based on Heavily Doped Epitaxial Ge-on-Si: Retrieving the Optical Constants of Thin Ge Epilayers

Baldassarre, L. et al. (2014) Mid-Infrared Plasmonic Platform based on Heavily Doped Epitaxial Ge-on-Si: Retrieving the Optical Constants of Thin Ge Epilayers. In: 2014 39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), Tucson, AZ, USA, 14-19 September 2014, ISBN 9781479938773 (doi:10.1109/IRMMW-THz.2014.6956438)

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Abstract

The n-type Ge-on-Si epitaxial material platform enables a novel paradigm for plasmonics in the mid-infrared, prompting the future development of lab-on-a-chip and subwavelength vibrational spectroscopic sensors. In order to exploit this material, through proper electrodynamic design, it is mandatory to retrieve the dielectric constants of the thin Ge epilayers with high precision due to the difference from bulk Ge crystals. Here we discuss the procedure we have employed to extract the real and imaginary part of the dielectric constants from normal incidence reflectance measurements, by combining the standard multilayer fitting procedure based on the Drude model with Kramers-Kronig transformations of absolute reflectance data in the zero-transmission range of the thin film.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas and Samarelli, Mr Antonio and Gallacher, Dr Kevin
Authors: Baldassarre, L., Calandrini, E., Samarelli, A., Gallacher, K., Paul, D. J., Frigerio, J., Isella, G., Sakat, E., Finazzi, M., Biagioni, P., and Ortolani, M.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Publisher:IEEE
ISSN:2162-2035
ISBN:9781479938773
Published Online:20 November 2014

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