Heavily phosphorous-doped Germanium thin films for mid-infrared plasmonics

Frigerio, J. et al. (2015) Heavily phosphorous-doped Germanium thin films for mid-infrared plasmonics. 2015 IEEE 12th International Conference on Group IV Photonics (GFP), Vancouver, Canada, 26-28 Aug 2015. pp. 94-95. ISBN 9781479982554 (doi:10.1109/Group4.2015.7305964)

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Heavily doped Ge thin films grown on different substrates have been investigated by infrared (IR) reflectometry. Screened plasma frequency and losses have been determined to assess the possibilities and limitations of Ge for mid infrared plasmonic.

Item Type:Conference or Workshop Item
Additional Information:The research leading to these results has received funding from the European Union's Seventh Framework Programme under grant agreement n°613055.
Glasgow Author(s) Enlighten ID:Samarelli, Mr Antonio and Gallacher, Dr Kevin and Paul, Professor Douglas
Authors: Frigerio, J., Baldassarre, L., Sakat, E., Samarelli, A., Gallacher, K., Fischer, M., Brida, D., Paul, D., Isella, G., Biagioni, P., and Ortolani, M.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
634451GEMINIDouglas PaulEuropean Commission (EC)613055ENG - ENGINEERING ELECTRONICS & NANO ENG