Fabrication of wires in silicon germanium material

Paul, D..J. , Cleaver, J.R.A. and Ahmed, H. (1993) Fabrication of wires in silicon germanium material. Microelectronic Engineering, 21(1), 349 - 352. (doi:10.1016/0167-9317(93)90089-N)

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Abstract

Reactive ion etching (RIE) of epitaxial, strained Si1-xGex alloys (x < 0.2) using SiCl4 and CF4 mixtures has been investigated. RIE using CF4/O2 plasmas was found to have a significant chemical effect resulting in undercut etch profiles. Anisotropic etch profiles were found from SiCl4 and SiCl4/CF4 plasmas indicating the physical etching nature of the chlorine based plasmas. The etch rates of the Si1-xGex alloys increased with increasing Ge content for the SiCl4 and SiCl4/CF4 etch systems. The addition of CF4 to SiCl4 plasmas was found to reduce surface roughness or "grass", which is a known problem in chlorine based etching of Si. Wires with widths below 100nm have been fabricated.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Paul, D..J., Cleaver, J.R.A., and Ahmed, H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Microelectronic Engineering
ISSN:0167-9317
ISSN (Online):0167-9317
Published Online:01 May 2002

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