EBIC of Strained Si/SiGe 2DEGs Showing Lateral Electron Confinement

Norman, C. E., Griffin, N., Arnone, D.D., Paul, D.J. , Pepper, M., Gallas, B. and Fernandez, J.M. (1998) EBIC of Strained Si/SiGe 2DEGs Showing Lateral Electron Confinement. 5th International Workshop on Beam Injection Assessment of Defects in Semiconductors (BIADS 98) pp. 25-32. (doi:10.4028/www.scientific.net/SSP.63-64.25)

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Abstract

No abstract available.

Item Type:Conference or Workshop Item
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Norman, C. E., Griffin, N., Arnone, D.D., Paul, D.J., Pepper, M., Gallas, B., and Fernandez, J.M.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Publisher:Trans Tech Publications
Published Online:01 December 1998

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