Terahertz intersubband emission from silicon-germanium quantum cascades

Kelsall, R. W. et al. (2002) Terahertz intersubband emission from silicon-germanium quantum cascades. Proceedings, IEEE Tenth International Conference on Terahertz Electronics, Cambridge, UK, 10 September 2002. pp. 9-12. ISBN 0780376307 (doi:10.1109/THZ.2002.1037575)

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Abstract

Terahertz electroluminescence due to light hole-heavy hole intersubband transitions in p-type Si/SiGe quantum cascade structures has been observed in both surface-normal and edge emission geometries. THz output powers of up to 50 nW have been observed for surface emission from 100 period Si/sub 0.76/Ge/sub 0.24//Si heterostructures grown on a Si/sub 0.8/Ge/sub 0.2/ relaxed buffer or 'virtual substrate'.

Item Type:Conference or Workshop Item
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Kelsall, R. W., Ikonic, Z., Harrison, P., Lynch, S. A., Bates, R., Paul, D. J., Norris, D. J., Liew, S. L., Cullis, A. G., Robbins, D. J., Murzyn, P., Pidgeon, C. R., and Arnone, D. D.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
ISBN:0780376307

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