Silicon Quantum Integrated Circuits: Silicon-Germanium Heterostructure Devices: Basics and Realisations

Kasper, E. and Paul, D.J. (2005) Silicon Quantum Integrated Circuits: Silicon-Germanium Heterostructure Devices: Basics and Realisations. Series: Nanoscience and Technology. Springer-Verlag: Berlin Heidelberg. ISBN 9783540263821 (doi:10.1007/b137494)

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Abstract

Quantum size effects are becoming increasingly important in microelectronics as the dimensions of the structures shrinks laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room temperature operation. The basic physical principles, materials, technological aspects and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics.

Item Type:Books
Status:Published
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Kasper, E., and Paul, D.J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices
Publisher:Springer-Verlag
ISBN:9783540263821
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