Bound-to-Continuum Quantum Cascade Emitters for Terahertz Emission

Paul, D.J. , Townsend, P., Lynch, S.A., Zhao, M., Ni, W.X. and Zhang, J. (2006) Bound-to-Continuum Quantum Cascade Emitters for Terahertz Emission. 2006 International SiGe Technology and Device Meeting, Princeton, NJ, USA, 15-17 May 2006. pp. 1-2. ISBN 1424404614 (doi:10.1109/ISTDM.2006.246503)

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In this paper, the first experiment results from Si/SiGe bound-to-continuum quantum cascade emitters are presented operating at THz frequencies. The quantum cascade emitters are grown by chemical vapour deposition (CVD)/gas source molecular beam epitaxy (MBE) and solid-source MBE.

Item Type:Conference or Workshop Item
Keywords:chemical vapour deposition; elemental semiconductors; Ge-Si alloys; molecular beam epitaxial growth; quantum cascade lasers; semiconductor growth; silicon; submillimetre wave lasers; bound-to-continuum quantum cascade emitters; terahertz emission; THz frequencies; chemical vapour deposition; gas source molecular beam epitaxy; solid-source MBE;Si-SiGe; Quantum cascade lasers; Molecular beam epitaxial growth; Optical scattering; Temperature; Frequency; Particle scattering; Silicon germanium; Germanium silicon alloys; Doping; X-ray scattering
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Paul, D.J., Townsend, P., Lynch, S.A., Zhao, M., Ni, W.X., and Zhang, J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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