Structural and Compositional Properties of Strain-Symmetrized SiGe/Si Heterostructures

Ross, I.M. et al. (2008) Structural and Compositional Properties of Strain-Symmetrized SiGe/Si Heterostructures. Microscopy of Semiconducting Materials 2007, Cambridge, UK, 2-5 April 2007. 269 - 272. ISBN 9781402086144 (doi:10.1007/978-1-4020-8615-1_59)

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In this study, we have utilised conventional and aberration corrected (scanning) transmission electron microscopy to examine the Ge concentration across a series of technologically significant SiGe/Si prototype heterostructures. Electron energy loss line profiles show that the Ge concentration within the SiGe quantum wells approaches the nominal values. However, the Ge concentration profile shows that the interfaces are not abrupt and that the narrow 0.8nm barrier layer does not reach the nominal pure Si composition. Speculation as to the presence of Ge interdiffusion, surface segregation or interface roughness is discussed.

Item Type:Conference or Workshop Item
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas
Authors: Ross, I.M., Gass, M., Walther, T., Bleloch, A., Cullis, A.G., Lever, L., Ikonic, Z., Califano, M., Kelsall, R.W., Zhang, J., and Paul, D.J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Semiconductor Devices

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