High-Power AlGaInAs/InP DFB Lasers with Low Divergence Angle

Liu, Y., Wang, J., Huang, Y., Zhang, R., Zhu, H. and Hou, L. (2019) High-Power AlGaInAs/InP DFB Lasers with Low Divergence Angle. In: CLEO/Europe-EQEC Conference (EQEC 2019), Munich, Germany, 23-27 Jun 2019, ISBN 9781728104706 (doi: 10.1109/CLEOE-EQEC.2019.8872502)

Abstract

High-power semiconductor DFB lasers with low divergence angle fundamental transverse mode operating at wavelengths near 1.31 μm have many applications such as analog and digital fiber communication, WDM pump sources, spectroscopy, remote sensing, free-space communication, laser-based radar, and wavelength conversion in nonlinear materials [1]. These devices can potentially reduce system costs by simplifying optical alignment and package processes [2]. Devices with narrow far-field patterns (FFPs) are highly desirable for simple, high-yield optical alignment, as a low divergence angle improves the coupling efficiency and imposes less stringent tolerances in the alignment between the device and the single-mode fiber (SMF). Until now most of the high-power low divergence angle 1.31 μm DFB laser is based on InGaAsP/InP material system which has lower characteristic temperature value T 0 [3]. Here we first demonstrate the high-power fundamental transverse mode 1.31 μm AlGaInAs/InP DFB laser with low divergence angle, enabling uncooled continuous-wave (CW) operation at high ambient temperatures.

• Item Type: Conference Proceedings
• Additional Information: This work was supported by the National Natural Science Foundation of China under Grant 61574137 and Grant 61320106013.
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Zhu, Professor Hongliang and Hou, Dr Lianping
• Authors: Liu, Y., Wang, J., Huang, Y., Zhang, R., Zhu, H., and Hou, L.
• College/School: College of Science and Engineering > School of Engineering; College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• ISBN: 9781728104706
• Copyright Holders: Copyright © 2019 IEEE
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher

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