Role of potential barriers in epitaxial layers of semi- insulating GaN layers

Vaitkus, J.V., Gaubas, E., Sakai, S., Lacroix, Y., Wang, T., Smith, K.M., Rahman, M. and Cunningham, W. (2003) Role of potential barriers in epitaxial layers of semi- insulating GaN layers. Polycrystalline Semiconductors VII, Proceedings Solid State Phenomena, 93, 301 -306.

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Publisher's URL: http://www.scientific.net/default.cfm?issn=1012-0394&pg=1&isbn=3-908450-79-9&ppg=41

Abstract

The electrical properties of semi-insulating GaN were investigated by dc and microwave techniques. The different epitaxial GaN layers were grown by Metal Organic Chemical Vapour Deposition on a Al2O3 (0001) substrate. Space charge effects along and perpendicular to the direction of layer growth were proposed to explain the observed peculiarities of the dark current and photocurrent. From the temporal and temperature dependences of characteristic time constants in the photoconductivity decay, the details of non-equilibrium states were analysed in the semi-insulating GaN. The well-resolved alpha-particle spectra obtained demonstrates the promise of semi-insulating GaN for ionising radiation detection.

Item Type:Articles
Additional Information:Presented at the 7th International conference, Polycrystalline semiconductors, September 2002, Nara, Japan.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Vaitkus, Prof Juozas and Cunningham, Dr Liam and Smith, Professor Kenway and Sakai, Mr Satoru
Authors: Vaitkus, J.V., Gaubas, E., Sakai, S., Lacroix, Y., Wang, T., Smith, K.M., Rahman, M., and Cunningham, W.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Physics and Astronomy
Journal Name:Polycrystalline Semiconductors VII, Proceedings Solid State Phenomena
ISSN:1012-0394

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