A planar distributed channel AlGaN/GaN HEMT technology

Elksne, M. , Al-Khalidi, A. and Wasige, E. (2019) A planar distributed channel AlGaN/GaN HEMT technology. IEEE Transactions on Electron Devices, 66(5), pp. 2454-2458. (doi: 10.1109/TED.2019.2907152)

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Abstract

This brief presents AlGaN/GaN high electron mobility transistor (HEMT) devices with improved thermal and dc current-voltage (I-V) performance using a novel method of obtaining a distributed channel device, i.e., the total semiconductor area between the ohmic contacts comprise conducting and nonconducting regions. A novel oxygen (O2) plasma treatment technique is used to realize the inactive or nonconducting regions. Multifinger devices with 1-mm gate periphery exhibit extremely low gate leakage currents below 0.2 μA/mm at a gate voltage of -20 V and an increase in the saturated output current by 14% at 20-V drain voltage. Moreover, performed dc I-V measurements at various ambient temperatures show that the proposed method not only increases the saturated output currents by over 10% for 1 × 100 μm 2 gate devices but also significantly reduces their knee walkout voltage from 6 to 3 V at 300 K. These results show that this device design approach can exploit further the potential of the GaN material system for transistor applications.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Wasige, Professor Edward and Elksne, Maira and Al-Khalidi, Dr Abdullah
Authors: Elksne, M., Al-Khalidi, A., and Wasige, E.
College/School:College of Science and Engineering > School of Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Transactions on Electron Devices
Publisher:IEEE
ISSN:0018-9383
ISSN (Online):1557-9646
Published Online:03 April 2019
Copyright Holders:Copyright © 2019 IEEE
First Published:First published in IEEE Transactions on Electron Devices 66(5): 2454-2458
Publisher Policy:Reproduced in accordance with the publisher copyright policy

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
600761Silicon Compatible GaN Power ElectronicsIain ThayneEngineering and Physical Sciences Research Council (EPSRC)EP/K014471/1ENG - ENGINEERING ELECTRONICS & NANO ENG