A planar distributed channel AlGaN/GaN HEMT technology

Elksne, M. , Al-Khalidi, A. and Wasige, E. (2019) A planar distributed channel AlGaN/GaN HEMT technology. IEEE Transactions on Electron Devices, (Accepted for Publication)

[img] Text
182479.pdf - Accepted Version
Restricted to Repository staff only

1MB

Abstract

No abstract available.

Item Type:Articles
Status:Accepted for Publication
Refereed:Yes
Glasgow Author(s) Enlighten ID:Wasige, Professor Edward and Al-Khalidi, Dr Abdullah and Elksne, Maira
Authors: Elksne, M., Al-Khalidi, A., and Wasige, E.
College/School:College of Science and Engineering > School of Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Transactions on Electron Devices
Publisher:IEEE
ISSN:0018-9383
ISSN (Online):1557-9646

University Staff: Request a correction | Enlighten Editors: Update this record

Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
600761Silicon Compatible GaN Power ElectronicsIain ThayneEngineering and Physical Sciences Research Council (EPSRC)EP/K014471/1ENG - ENGINEERING ELECTRONICS & NANO ENG