Effects of compositional clustering on electron transport in In0.53Ga0.47As

Marsh, J.H. (1982) Effects of compositional clustering on electron transport in In0.53Ga0.47As. Applied Physics Letters, 41(8), pp. 732-734. (doi: 10.1063/1.93658)

Full text not currently available from Enlighten.


A new theory of alloy scattering is proposed which assumes the presence of compositional clusters in alloy semiconductors. This is used in electron transport calculations for In0.53Ga0.47As, and it is found that good agreement can be obtained with experimental velocity‐field data, measured up to the threshold electric field. The theory assumes small (∼2%) fluctuations in composition over 1000 atoms.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Marsh, Professor John
Authors: Marsh, J.H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics Letters
Publisher:AIP Publishing
ISSN (Online):1077-3118

University Staff: Request a correction | Enlighten Editors: Update this record