Removal of damage in ion-implanted GaInAs

Shahid, M.A., Anjum, M., Sealy, B.J., Gill, S.S. and Marsh, J.H. (1984) Removal of damage in ion-implanted GaInAs. Vacuum, 34(10-11), pp. 867-870. (doi: 10.1016/0042-207X(84)90165-9)

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LPE Ga0.47 In0.53 As layers, lattice matched to (100) InP have been implanted with Mg+ and Se+ ions at room temperature. Electron concentrations of the order of 1019 cm−3 have been achieved in the case of selenium implanted material. This gives low values of sheet resistivity of less than 20 Ω/□ and is useful for making ohmic contacts. The Mg+ implants, however, do not show any electrical activity. A difference in the annealing behaviour of Mg+ and Se+ implanted GaInAs has been observed by TEM. Transient annealing, employing a graphite strip heater and an incoherent light furnace, was the major annealing technique used. Samples for TEM studies also included annealing cycles in a conventional furnace.

Item Type:Articles
Additional Information:Financial suport: SERC.
Glasgow Author(s) Enlighten ID:Marsh, Professor John
Authors: Shahid, M.A., Anjum, M., Sealy, B.J., Gill, S.S., and Marsh, J.H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Vacuum
ISSN (Online):1879-2715

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