The properties of annealed Se +-implanted GaInAs

Sealy, B.J., Shahid, M.A., Anjum, M., Gill, S.S. and Marsh, J.H. (1985) The properties of annealed Se +-implanted GaInAs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7-8(1), pp. 423-428. (doi:10.1016/0168-583X(85)90592-0)

Full text not currently available from Enlighten.

Abstract

p-GaInAs lattice matched to (100) InP was grown and implanted with selenium ions at room temperature. The dose was in the range of 5 × 10 13 to 5 × 10 15 ions cm −2 at an energy of 400 keV. The results of secondary ion mass spectroscopy indicate that for short anneals of 30 s at 800°C, very little dopant redistribution takes place. However, for longer time anneals of 900 s at 800°C a significant outdiffusion and loss of selenium is observed. Electron concentrations in the range of 10 18 to 10 19 cm −3 with corresponding Hall mobilities of 1800 to 1200 cm 2 V −1 s −1 were measured, the lowest sheet resistivity being 12 Ω/□. Transmission electron microscopy results indicate that good crystallinity in the implanted material is restored after short time anneals, but the long time anneals introduce damage within the implanted region.

Item Type:Articles
Additional Information:Financial support: SERC.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John
Authors: Sealy, B.J., Shahid, M.A., Anjum, M., Gill, S.S., and Marsh, J.H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Publisher:Elsevier
ISSN:0168-583X
ISSN (Online):1872-9584

University Staff: Request a correction | Enlighten Editors: Update this record