Photoluminescence from In0.53Ga0.47As/InP quantum wells grown by molecular beam epitaxy

Marsh, J.H. , Roberts, J.S. and Claxton, P.A. (1985) Photoluminescence from In0.53Ga0.47As/InP quantum wells grown by molecular beam epitaxy. Applied Physics Letters, 46(12), pp. 1161-1163. (doi:10.1063/1.95744)

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Abstract

Room‐temperature and low‐temperature photoluminescence from quantum well In0.53Ga0.47As/InP structures grown by molecular beam epitaxy is reported for the first time. A range of well thicknesses from 240 down to 10 Å was studied. Emission as short as 1.16 μm (1.07 eV) at 3.8 K and 1.22 μm (1.02 eV) at 300 K was observed from a well ∼10 Å, and the overall luminescence efficiency of the structure was ∼50 times greater than that of a quaternary sample of similar carrier concentration grown by liquid phase epitaxy. The full width half‐maximum of the photoluminescence peak from a 20‐Å well was 11.6 meV at 3.8 K. These results indicate the cladding InP as well as the interfaces are of very high quality.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John
Authors: Marsh, J.H., Roberts, J.S., and Claxton, P.A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics Letters
Publisher:AIP Publishing
ISSN:0003-6951
ISSN (Online):1077-3118

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