Measurement of the electron phase relaxation rate in In0.53Ga0.47As: a possible diagnostic test of compositional disorder

Newson, D.J., Pepper, M., Hall, H.Y. and Marsh, J.H. (1985) Measurement of the electron phase relaxation rate in In0.53Ga0.47As: a possible diagnostic test of compositional disorder. Journal of Physics C: Solid State Physics, 18(32), L1041-L1047. (doi:10.1088/0022-3719/18/32/004)

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Abstract

The authors present low-field magnetoresistance measurements made at low temperatures (<or=4.2K) on n-type samples of the semiconductor alloy In0.53Ga0.47As doped in excess of the metal-insulator transition. The samples were strongly degenerate at the temperatures of the measurements. The low-field magnetoresistance is found to be governed by quantum interference (weak-localisation) effects. The authors find that good fits to the data are obtained with a phase relaxation time as the sole variable. This time is much shorter than the calculated magnetic or spin-orbit scattering times, supporting their assertion that these are only minor perturbations.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John
Authors: Newson, D.J., Pepper, M., Hall, H.Y., and Marsh, J.H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Physics C: Solid State Physics
Publisher:IOP Publishing
ISSN:0022-3719
ISSN (Online):1747-3802

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