Newson, D.J., Pepper, M., Hall, H.Y. and Marsh, J.H. (1985) Measurement of the electron phase relaxation rate in In0.53Ga0.47As: a possible diagnostic test of compositional disorder. Journal of Physics C: Solid State Physics, 18(32), L1041-L1047. (doi: 10.1088/0022-3719/18/32/004)
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Abstract
The authors present low-field magnetoresistance measurements made at low temperatures (<or=4.2K) on n-type samples of the semiconductor alloy In0.53Ga0.47As doped in excess of the metal-insulator transition. The samples were strongly degenerate at the temperatures of the measurements. The low-field magnetoresistance is found to be governed by quantum interference (weak-localisation) effects. The authors find that good fits to the data are obtained with a phase relaxation time as the sole variable. This time is much shorter than the calculated magnetic or spin-orbit scattering times, supporting their assertion that these are only minor perturbations.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Marsh, Professor John |
Authors: | Newson, D.J., Pepper, M., Hall, H.Y., and Marsh, J.H. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Journal of Physics C: Solid State Physics |
Publisher: | IOP Publishing |
ISSN: | 0022-3719 |
ISSN (Online): | 1747-3802 |
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