Roberts, J.S., Claxton, P.A., David, J.P.R. and Marsh, J.H. (1986) Improved molecular beam epitaxial growth of InP using solid sources. Electronics Letters, 22(10), pp. 506-507. (doi: 10.1049/el:19860345)
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Abstract
Molecular beam epitaxy (MBE) has been used to grow high-purity InP layers using solid sources and a graphite cracking zone to generate P2. Close control of slice temperature was achieved by mounting the substrate on a 3 in (75.6 mm) silicon wafer with indium solder. In addition, two differently packed phosphorus sources were investigated to assess the effect of oxides/water on InP purity. Several InP layers with a 77 K mobility of ~50000 cm2V¿1s¿1 were grown using a phosphorus source vacuum-packed at manufacture.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Marsh, Professor John |
| Authors: | Roberts, J.S., Claxton, P.A., David, J.P.R., and Marsh, J.H. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Electronics Letters |
| Publisher: | Institution of Engineering & Technology |
| ISSN: | 0013-5194 |
| ISSN (Online): | 1350-911X |
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