Improved molecular beam epitaxial growth of InP using solid sources

Roberts, J.S., Claxton, P.A., David, J.P.R. and Marsh, J.H. (1986) Improved molecular beam epitaxial growth of InP using solid sources. Electronics Letters, 22(10), pp. 506-507. (doi:10.1049/el:19860345)

Full text not currently available from Enlighten.

Abstract

Molecular beam epitaxy (MBE) has been used to grow high-purity InP layers using solid sources and a graphite cracking zone to generate P2. Close control of slice temperature was achieved by mounting the substrate on a 3 in (75.6 mm) silicon wafer with indium solder. In addition, two differently packed phosphorus sources were investigated to assess the effect of oxides/water on InP purity. Several InP layers with a 77 K mobility of ~50000 cm2V¿1s¿1 were grown using a phosphorus source vacuum-packed at manufacture.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John
Authors: Roberts, J.S., Claxton, P.A., David, J.P.R., and Marsh, J.H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Electronics Letters
Publisher:Institution of Engineering & Technology
ISSN:0013-5194
ISSN (Online):1350-911X

University Staff: Request a correction | Enlighten Editors: Update this record