Refractive index changes in a GaAs multiple quantum well structure produced by impurity‐induced disordering using boron and fluorine

Hansen, S.I., Marsh, J.H. , Roberts, J.S. and Gwilliam, R. (1991) Refractive index changes in a GaAs multiple quantum well structure produced by impurity‐induced disordering using boron and fluorine. Applied Physics Letters, 58(13), pp. 1398-1400. (doi: 10.1063/1.104320)

Abstract

The effect of boron and fluorine impurity‐induced disordering on the refractive index of AlxGa1−xAs multiple quantum well waveguides has been studied experimentally using a grating coupler formed in low‐index material. Substantial changes ≳1% in the refractive index, were obtained in partially disordered material over the measured wavelength range. Fluorine was found to produce larger changes than boron for similar annealing conditions.

• Item Type: Articles
• Additional Information: This work was supported by the SERC (UK) under Grants GR/D 31461 and GR/F 65248 and by Norwegian Telecom.
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Marsh, Professor John
• Authors: Hansen, S.I., Marsh, J.H., Roberts, J.S., and Gwilliam, R.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Applied Physics Letters
• Publisher: AIP Publishing
• ISSN: 0003-6951
• ISSN (Online): 1077-3118