Impurity induced disordering of GaInAs quantum wells with barriers of AlGaInAs or of GaInAsP

Marsh, J.H. , Bradshaw, S.A., Bryce, A.C., Gwilliam, R. and Glew, R.W. (1991) Impurity induced disordering of GaInAs quantum wells with barriers of AlGaInAs or of GaInAsP. Journal of Electronic Materials, 20(12), pp. 973-978. (doi: 10.1007/BF03030191)

Abstract

Impurity induced disordering of GaInAs quantum well structures with barriers of AlGaInAs and of GaInAsP has been investigated using boron and fluorine. The impurities were introduced by ion implantation followed by thermal annealing. Annealing unimplanted P-based quaternary material at temperatures greater than 500° C caused a blue shift of the exciton peak. At annealing temperatures greater than 650° C red shifts in the exciton peak of unimplanted Al-based quaternary material were observed. Boron implantation caused small blue shifts of the exciton peak in both material systems at low annealing temperatures. Much larger blue shifts were observed in the fluorine implanted samples.

• Item Type: Articles
• Additional Information: This work was supported by STC Technology Ltd and by SERC under the DTI/SERC Optoelectronic Systems LINK Programme.
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Marsh, Professor John
• Authors: Marsh, J.H., Bradshaw, S.A., Bryce, A.C., Gwilliam, R., and Glew, R.W.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Journal of Electronic Materials
• Publisher: Springer
• ISSN: 0361-5235
• ISSN (Online): 1543-186X