Bryce, A.C., Marsh, J.H. , Gwilliam, R. and Glew, R.W. (1991) Impurity induced disordering in InGaAs/InGaAlAs quantum wells using implanted fluorine and boron. IEE Proceedings J: Optoelectronics, 138(2), pp. 87-90. (doi: 10.1049/ip-j.1991.0015)
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Abstract
Impurity induced disordering of an InGaAs/InGaAlAs quantum well structure has been investigated using boron and fluorine. The impurities were introduced by ion implantation and followed by thermal annealing. Small blue shifts in the exciton peak were observed in the boron implanted material. Much larger blue shifts, over 40 meV, were observed in the fluorine implanted material. At annealing temperatures greater than 650 degrees C, red shifts in the exciton peak of unimplanted material were measured.
| Item Type: | Articles |
|---|---|
| Additional Information: | Work at Glasgow was supported by STC Technology Ltd, and by SERC under grant GR/D99607. |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Marsh, Professor John |
| Authors: | Bryce, A.C., Marsh, J.H., Gwilliam, R., and Glew, R.W. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | IEE Proceedings J: Optoelectronics |
| Publisher: | IET |
| ISSN: | 0267-3932 |
| ISSN (Online): | 2053-9088 |
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