Applications of neutral impurity disordering in fabricating low-loss optical waveguides and integrated waveguide devices

Marsh, J.H. , Hansen, S.I., Bryce, A.C. and De La Rue, R.M. (1991) Applications of neutral impurity disordering in fabricating low-loss optical waveguides and integrated waveguide devices. Optical and Quantum Electronics, 23(7), S941-S957. (doi:10.1007/BF00624983)

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Abstract

Novel applications of impurity-induced disordering (IID) in semiconductor integrated optoelectronics are discussed and some requirements of the IID process are quantified. The effect of boron and fluorine as disordering species, in both GaAs/AlGaAs and GaInAs/AlGaInAs, has been studied. Because boron and fluorine are not active dopants at room temperature, low-loss high-resistivity waveguides can be formed. In the GaAs/AlGaAs system fluorine has been found to produce larger changes than boron for similar annealing conditions. Fluorine-disordered multiple quantum well waveguide structures exhibited blue shifts of up to 100 meV in the absorption edge (representing complete disordering). The absorption coefficient in partially disordered structures at near-band-edge wavelengths was as low as 4.7 dB cm−1. This absorption edge shift was accompanied by substantial changes, (>1%) in the refractive index. Boron- and fluorine-induced disordering of GaInAs/AlGaInAs quantum well structures lattice-matched to InP has also been investigated. Only small blue shifts in the exciton peak, ascribed to implantation damage, were observed in boron-implanted samples, but blue shifts of over 40 meV (again representing complete disordering) were observed in the fluorine-implanted samples.

Item Type:Articles
Additional Information:This work was supported financially by SERC through grants GR/D 31461, GR/D 99607 and GR/E 50117, by Norwegian Telecom and by STC Technology Ltd.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John and De La Rue, Professor Richard
Authors: Marsh, J.H., Hansen, S.I., Bryce, A.C., and De La Rue, R.M.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Optical and Quantum Electronics
Publisher:Kluwer Academic Publishers
ISSN:0306-8919
ISSN (Online):1572-817X

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