Vaitkus, J., Gaubas, E., Jasinskaite, R., Juska, G., Kazukauskas, V., Puras, R., Rahman, M., Sakalauskas, S. and Smith, K. (2002) Characterisation of semiconductor materials for ionising radiation detectors. Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment, 487(1-2), 1 -12. (doi: 10.1016/S0168-9002(02)00937-3)
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Publisher's URL: http://dx.doi.org/10.1016/S0168-9002(02)00937-3
Abstract
Methods for the detection and characterisation of semiconductor material parameters and inhomogeneities are analysed. The peculiarities of different "classical" material and structure characterisation methods are discussed. The methods of lifetime and surface recombination mapping and electric field distribution in the samples are presented. Some results of investigations of GaAs, Si and SiC are used for the characterisation of different peculiarities or methods.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Vaitkus, Prof Juozas and Smith, Professor Kenway |
| Authors: | Vaitkus, J., Gaubas, E., Jasinskaite, R., Juska, G., Kazukauskas, V., Puras, R., Rahman, M., Sakalauskas, S., and Smith, K. |
| Subjects: | Q Science > QC Physics |
| College/School: | College of Science and Engineering > School of Physics and Astronomy |
| Journal Name: | Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment |
| Publisher: | Elsevier |
| ISSN: | 0168-9002 |
| ISSN (Online): | 1872-9576 |
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