Layer selective disordering by photoabsorption-induced thermal diffusion in InGaAs/InP based multiquantum well structures

McLean, C.J., Marsh, J.H. , De La Rue, R.H. , Bryce, A.C., Garrett, B. and Glew, R.W. (1992) Layer selective disordering by photoabsorption-induced thermal diffusion in InGaAs/InP based multiquantum well structures. Electronics Letters, 28(12), pp. 1117-1119. (doi: 10.1049/el:19920705)

Abstract

Laser-induced intermixing of a buried InGaAs/InGaAsP multiquantum well structure using a CW Nd:YAG laser, operating at a wavelength of 1064 nm, has been demonstrated. The process does not involve transient melting of the semiconductor, but relies on preferential absorption by the active region producing sufficient heat to cause intermixing between the wells and barriers. Photoluminescence measurements at 77 K indicate that bandgap shifts as large as 123 meV are obtainable using moderate laser beam power densities and periods of irradiation.

• Item Type: Articles
• Additional Information: This work was supported by the SERC under grant GR/G/13488.
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Marsh, Professor John and De La Rue, Professor Richard
• Authors: McLean, C.J., Marsh, J.H., De La Rue, R.H., Bryce, A.C., Garrett, B., and Glew, R.W.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Electronics Letters
• Publisher: Institution of Engineering & Technology
• ISSN: 0013-5194
• ISSN (Online): 1350-911X