Quantum well intermixing

Marsh, J.H. (1993) Quantum well intermixing. Semiconductor Science and Technology, 8(6), pp. 1136-1155. (doi: 10.1088/0268-1242/8/6/022)

Full text not currently available from Enlighten.


Intermixing the wells and barriers of quantum well structures generally results in an increase in the band gap and is accompanied by changes in the refractive index. A range of techniques, based on impurity diffusion, dielectric capping and laser annealing has been developed to enhance the quantum well intermixing (QWI) rate in selected areas of a wafer; such processes offer the prospect of a powerful and relatively simple fabrication route for integrating optoelectronic devices and for forming photonic integrated circuits (PICS). Recent progress in QWI techniques is reviewed, concentrating on processes which are compatible with PIC applications, in particular the achievement of low optical propagation losses.

Item Type:Articles
Additional Information:Financial support was provided by BNR Europe Ltd, by SERC under the DTI/SERC Optoelectronic Systems LINK Programme (GR/F/93913), and by SERC under grants GR/F/65248 and GR/G/13488.
Glasgow Author(s) Enlighten ID:Marsh, Professor John
Authors: Marsh, J.H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Semiconductor Science and Technology
Publisher:IOP Publishing
ISSN (Online):1361-6641

University Staff: Request a correction | Enlighten Editors: Update this record