Beauvais, J., Ayling, S.G. and Marsh, J.H. (1993) Low-loss extended cavity lasers by dielectric cap disordering with a novel masking technique. IEEE Photonics Technology Letters, 5(4), pp. 372-373. (doi: 10.1109/68.212668)
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Abstract
Low-loss extended cavity lasers fabricated in GaAs/AlGaAs quantum-well material busing silica cap disordering and strontium fluoride selective area masking are described. Losses as low as 17 dBcm/sup -1/ were measured in the passive slab waveguide sections. Lasing action was achieved in devices with passive sections of up to 2 mm in length.
Item Type: | Articles |
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Additional Information: | This work was supported by the Science and Engineering Research Council Grant GR/F 65248. |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Marsh, Professor John |
Authors: | Beauvais, J., Ayling, S.G., and Marsh, J.H. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | IEEE Photonics Technology Letters |
Publisher: | IEEE |
ISSN: | 1041-1135 |
ISSN (Online): | 1941-0174 |
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