Low-loss extended cavity lasers by dielectric cap disordering with a novel masking technique

Beauvais, J., Ayling, S.G. and Marsh, J.H. (1993) Low-loss extended cavity lasers by dielectric cap disordering with a novel masking technique. IEEE Photonics Technology Letters, 5(4), pp. 372-373. (doi:10.1109/68.212668)

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Abstract

Low-loss extended cavity lasers fabricated in GaAs/AlGaAs quantum-well material busing silica cap disordering and strontium fluoride selective area masking are described. Losses as low as 17 dBcm/sup -1/ were measured in the passive slab waveguide sections. Lasing action was achieved in devices with passive sections of up to 2 mm in length.

Item Type:Articles
Additional Information:This work was supported by the Science and Engineering Research Council Grant GR/F 65248.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John
Authors: Beauvais, J., Ayling, S.G., and Marsh, J.H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Photonics Technology Letters
Publisher:IEEE
ISSN:1041-1135
ISSN (Online):1941-0174

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