Lateral control of the bandgap in GaInAs/GaInAsP MQW structures using photoabsorption-induced disordering

McLean, C.J., McKee, A., Marsh, J.H. and De La Rue, R.M. (1993) Lateral control of the bandgap in GaInAs/GaInAsP MQW structures using photoabsorption-induced disordering. Electronics Letters, 29(18), pp. 1657-1658. (doi:10.1049/el:19931103)

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Abstract

The retention of high electrical and optical quality in GaInAs/GaInAsP multiquantum well laser material which has been bandgap widened by photoabsorption induced disordering (PAID) has been investigated using photoconducting measurements. On applying a reverse bias, Franz-Keldysh broadening of the exciton features is observed demonstrating that bandgap shifted modulators can be fabricated. Selective area disordering across the wafer using an Au reflection mask is also demonstrated.

Item Type:Articles
Additional Information:This work was supported by the Science and Engineering Research Council (UK) under grant GR/G/13488.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John and De La Rue, Professor Richard
Authors: McLean, C.J., McKee, A., Marsh, J.H., and De La Rue, R.M.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Electronics Letters
Publisher:Institution of Engineering & Technology
ISSN:0013-5194
ISSN (Online):1350-911X

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