Very low loss extended cavity GaAs/AlGaAs lasers made by impurity-free vacancy diffusion

Gontijo, I., Krauss, T., De La Rue, R.M. , Roberts, J.S. and Marsh, J.H. (1994) Very low loss extended cavity GaAs/AlGaAs lasers made by impurity-free vacancy diffusion. Electronics Letters, 30(2), pp. 145-146. (doi:10.1049/el:19940073)

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Abstract

Very low loss extended cavity lasers have been fabricated using the impurity-free vacancy diffusion technique. The average loss, obtained from the slope of measured loss as a function of the extended cavity length, was 10 dB/cn for extended cavities annealed at 900 degrees C for 30 s. The lowest loss of 3.6 dB/cm was obtained from a device annealed at 950 degrees C for 30 s.

Item Type:Articles
Additional Information:This work was supported by the Science and Engineering Research Council of the UK, under Grant Numbers GR/H/82471 and GR/F/65248.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John and De La Rue, Professor Richard
Authors: Gontijo, I., Krauss, T., De La Rue, R.M., Roberts, J.S., and Marsh, J.H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Electronics Letters
Publisher:Institution of Engineering & Technology
ISSN:0013-5194
ISSN (Online):1350-911X

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