Very low loss extended cavity GaAs/AlGaAs lasers made by impurity-free vacancy diffusion

Gontijo, I., Krauss, T., De La Rue, R.M. , Roberts, J.S. and Marsh, J.H. (1994) Very low loss extended cavity GaAs/AlGaAs lasers made by impurity-free vacancy diffusion. Electronics Letters, 30(2), pp. 145-146. (doi: 10.1049/el:19940073)

Abstract

Very low loss extended cavity lasers have been fabricated using the impurity-free vacancy diffusion technique. The average loss, obtained from the slope of measured loss as a function of the extended cavity length, was 10 dB/cn for extended cavities annealed at 900 degrees C for 30 s. The lowest loss of 3.6 dB/cm was obtained from a device annealed at 950 degrees C for 30 s.

• Item Type: Articles
• Additional Information: This work was supported by the Science and Engineering Research Council of the UK, under Grant Numbers GR/H/82471 and GR/F/65248.
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Marsh, Professor John and De La Rue, Professor Richard
• Authors: Gontijo, I., Krauss, T., De La Rue, R.M., Roberts, J.S., and Marsh, J.H.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Electronics Letters
• Publisher: Institution of Engineering & Technology
• ISSN: 0013-5194
• ISSN (Online): 1350-911X