Liang, J. et al. (2019) Investigation of Pt-salt-doped-standalone-multiwall carbon nanotubes for on-chip interconnect applications. IEEE Transactions on Electron Devices, 66(5), pp. 2346-2352. (doi: 10.1109/TED.2019.2901658)
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181807.pdf - Accepted Version 2MB |
Abstract
In this paper, we investigate, by combining electrical measurements with an atomistic-to-circuit modeling approach, the conductance of doped standalone multiwall carbon nanotubes (CNTs) as a viable candidate for the next generation of back-end-of-line interconnects. Ab initio simulations predict a doping-related shift of the Fermi level, which reduces shell chirality variability and improves electrical resistivity up to 90% by converting semiconducting shells to metallic. Electrical measurements of Pt-salt-doped CNTs provide up to 50% of resistance reduction, which is a milestone result for future CNT interconnect technology. Moreover, we find that defects and contacts introduce additional resistance, which limits the efficiency of doping, and are the primary cause for the mismatch between theoretical predictions and experimental measurements on doped CNTs.
| Item Type: | Articles |
|---|---|
| Additional Information: | This work was supported in part by the European Commission H2020 CONNECT Project through the Research and Innovation Program under Grant 688612. The works of Raphael Ramos and Jean Dijon were supported by Intel Oregon for CNT TEM characterization. |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Asenov, Professor Asen and Lee, Jaehyun and Berrada, Dr Salim and Georgiev, Professor Vihar |
| Authors: | Liang, J., Chen, R., Ramos, R., Lee, J., Okuno, H., Kalita, D., Georgiev, V., Berrada, S., Sadi, T., Uhlig, B., Lilienthal, K., Dhavamani, A., Konemann, F., Gotsmann, B., Goncalves, G., Chen, B., Asenov, A., Dijon, J., and Todri-Sanial, A. |
| College/School: | College of Science and Engineering > School of Engineering College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | IEEE Transactions on Electron Devices |
| Publisher: | Institute of Electrical and Electronics Engineers |
| ISSN: | 0018-9383 |
| ISSN (Online): | 1557-9646 |
| Published Online: | 11 March 2019 |
| Copyright Holders: | Copyright © 2019 IEEE |
| First Published: | First published in IEEE Transactions on Electron Devices 2019 |
| Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher |
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