Investigation of Pt-salt-doped-standalone-multiwall carbon nanotubes for on-chip interconnect applications

Liang, J. et al. (2019) Investigation of Pt-salt-doped-standalone-multiwall carbon nanotubes for on-chip interconnect applications. IEEE Transactions on Electron Devices, 66(5), pp. 2346-2352. (doi: 10.1109/TED.2019.2901658)

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Abstract

In this paper, we investigate, by combining electrical measurements with an atomistic-to-circuit modeling approach, the conductance of doped standalone multiwall carbon nanotubes (CNTs) as a viable candidate for the next generation of back-end-of-line interconnects. Ab initio simulations predict a doping-related shift of the Fermi level, which reduces shell chirality variability and improves electrical resistivity up to 90% by converting semiconducting shells to metallic. Electrical measurements of Pt-salt-doped CNTs provide up to 50% of resistance reduction, which is a milestone result for future CNT interconnect technology. Moreover, we find that defects and contacts introduce additional resistance, which limits the efficiency of doping, and are the primary cause for the mismatch between theoretical predictions and experimental measurements on doped CNTs.

Item Type:Articles
Additional Information:This work was supported in part by the European Commission H2020 CONNECT Project through the Research and Innovation Program under Grant 688612. The works of Raphael Ramos and Jean Dijon were supported by Intel Oregon for CNT TEM characterization.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Lee, Jaehyun and Berrada, Dr Salim and Georgiev, Dr Vihar
Authors: Liang, J., Chen, R., Ramos, R., Lee, J., Okuno, H., Kalita, D., Georgiev, V., Berrada, S., Sadi, T., Uhlig, B., Lilienthal, K., Dhavamani, A., Konemann, F., Gotsmann, B., Goncalves, G., Chen, B., Asenov, A., Dijon, J., and Todri-Sanial, A.
College/School:College of Science and Engineering > School of Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Transactions on Electron Devices
Publisher:Institute of Electrical and Electronics Engineers
ISSN:0018-9383
ISSN (Online):1557-9646
Published Online:11 March 2019
Copyright Holders:Copyright © 2019 IEEE
First Published:First published in IEEE Transactions on Electron Devices 2019
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
701891CONNECTAsen AsenovEuropean Commission (EC)688612ENG - ENGINEERING ELECTRONICS & NANO ENG